The MWE Group research activities focus on high-speed devices built in the AlGaInN/GaN, InP/GaAsSb and AlInAs/ GaInAs/InP material systems and their alloys. We exploit “Bandgap Engineering” techniques to develop new millimeter-wave transistors such as Heterostructure Bipolar Transistors (HBTs) and High Electron Mobility Transistors (HEMTs). Our projects are impactful: over the years, multiple bandwidth records for InP bipolar transistors and AlGaN/GaN and AlInN/- GaN-based transistors built on either SiC or Silicon substrates were set, and a number of devices have found industrial application and commercialization.