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Millimeter-Wave Electronics Laboratory (MWE)

: Overview and News

Mission

The MWE Group research activities focus on high-speed devices built in the AlGaInN/GaN, InP/GaAsSb and AlInAs/ GaInAs/InP material systems and their alloys. We exploit “Bandgap Engineering” techniques to develop new millimeter-wave transistors such as Heterostructure Bipolar Transistors (HBTs) and High Electron Mobility Transistors (HEMTs). Our projects are impactful: over the years, multiple bandwidth records for InP bipolar transistors and AlGaN/GaN and AlInN/- GaN-based transistors built on either SiC or Silicon substrates were set, and a number of devices have found industrial application and commercialization.

About Us

Education

Here you find information about lectures offered by our group and possible research and thesis projects.

Research Facilities

Get to know more about our research facilities.

Head

Prof. Dr. Colombo Bolognesi

Full Professor at the Department of Information Technology and Electrical Engineering