Halbleiterbauelemente (FS 2023)
Lecturer
Prof. Colombo Bolognesi and Dr. Tamara Popovic
Lecture Contents
Goal:
Understanding of the basic principles of semiconductor devices in micro-, opto-, and power electronics.
Contents:
- Brief survey of the history of microelectronics.
- Basic physics: crystal structure of solids, properties of silicon and other semiconductors, principles of quantum mechanics, band model, conductivity, dispersion relation, equilibrium statistics, transport equations, generation-recombination (G-R).
- Quasi-Fermi levels: physical and electrical properties of the pn-junction.
- Pn-diode: characteristics, small-signal behaviour, G-R currents, ideality factor, junction breakdown.
- Contacts: rectifying barrier.
- Bipolar transistor: operation principles, modes of operation, characteristics, models, simulation.
- MOS devices: band diagram, MOSFET operation, CV- and IV characteristics, frequency limitations and non-ideal behaviour.
Lecture Time:
Wednesday 10:00 – 12:00, NO C 60
(First lecture on Wednesday, 22.02.2023)
Exercises:
Mondays 16:00 – 18:00,
ETZ E9
LFW B1
LFW C5
(First exercise on Monday, 27.02.2023)
Assistants:
Exercises and lecture notes will be made available on the moodle page of the course