Characterization and Small-Signal Modelling of an Ultra-Low Noise InP High Electron Mobility Transistor (HEMT) Technology
Project Description
The goal of this master thesis is to develop a scalable smallsignal model for a state-of-the-art InP High Electron Mobility Transistor (HEMT) technology in collaboration with Diramics. The circuit model shall predict the small-signal and noise behavior for a range of transistor sizes at room and cryogenic temperatures. A scalable model will allow for a better understanding of the technology and enables an easier selection of the optimum device size for a certain application.