Development of passivation material in Double-Heterojunction Bipolar Transistors with Atomic Layer Deposition
Project Description
AlOx deposited with Atomic Layer Deposition has been researched widely as gate dielectrics in various transistors. Recently, MWE group started to use ALD deposited AlOx as passivation material for Base-emitter junction protection against forth-coming chemical attack. The other advantage of having dielectric covering BE mesa is the removal of semiconductor surface defects. Therefore, the quality of deposited thin film, as well as the dielectric-semiconductor interface are of great importance to the device performance.