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Near 800 GHz InP/GaAsSb DHBTs

Near 800 GHz InP/GaAsSb DHBTs to appear in the December 2014 issue of IEEE EDL.

by Anna Hambitzer
FIB cross section of a finalized transistor. The arrows mark the base access distance Formula. Voids in the Teflon planarization layer are caused by exposure to the ion- and electron-beams during inspection.
FIB cross section of a finalized transistor. The arrows mark the base access distance. Voids in the Teflon planarization layer are caused by exposure to the ion- and electron-beams during inspection.

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