First 94-GHz (W-band) large-signal performance of AlInN/GaN HEMTs on Silicon

First 94-GHz (W-band) large-signal performance of AlInN/GaN HEMTs on Silicon to appear in the Januar 2015 issue of IEEE EDL.

04.11.2014 by Anna Hambitzer

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Enlarged view: Power sweep of a 50-nm-gate HEMT at 94 GHz at a bias conditions Formula V and Formula V. The device is showing a maximum output power of 1.35 W/mm and a peak power added efficiency of 12%. — Power sweep of a 50-nm-gate HEMT at 94 GHz. The device is showing a maximum output power of 1.35 W/mm and a peak power added efficiency of 12%.