Giorgio Bonomo

Brief Biography:

Giorgio Bonomo was born in Catania, Italy on January 6th, 1996. He received the BSc degree in Electronic Engineering from Politecnico di Torino in 2017 and the MSc degree in Electronic Engineering and Electrical and Computer Engineering from respectively Politecnico di Torino and University of Illinois at Chicago in 2019. He is currently pursuing the Ph.D degree in Millimeter-Wave Electronics Group under the supervision of Prof. Dr. Colombo Bolognesi at the Swiss Federal Institute of Technology (ETH Zürich), focusing on the fabrication and characterization of InP high electron mobility transistors (HEMTs).